Efficiency of InGaN/GaN quantum wells: investigation of non-radiative centers as revealed by DLOS
Master thesis from Oct. 2023 - Feb. 2024. (Finished)
Summary
It is established nowadays that the efficiency of InGaN/GaN quantum wells (QWs) is mainly governed by the presence of point defects, the origin of which is still unknown.
This project aims at elucidating the origin of these deep traps by varying different parameters and combining various characterization techniques like temperature and power - dependent photoluminescence and deep level spectroscopy.
In addition, the determination of the energy of the traps will rely on modeling the QW energy states.
Supervisor:
- Prof. Nicolas Grandjean (nicolas.grandjean@epfl.ch)